? 2003 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c48a i c90 t c = 90 c24a i cm t c = 25 c, 1 ms 96 a ssoa v ge = 15 v, t j = 125 c, r g = 33 ? i cm = 48 a (rbsoa) clamped inductive load, v cc = 0.8 v ces @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 33 ?, non repetitive p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c weight 2g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 1.5 ma, v ce = v ge 3.5 6.5 v i ces v ce = 0.8 ? v ces t j = 25 c25 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.5 v features z international standard packages z guaranteed short circuit soa capability z low v ce(sat) - for low on-state conduction losses z high current handling capability z mos gate turn-on - drive simplicity z fast fall time for switching speeds up to 50 khz applications z ac and dc motor speed control z uninterruptible power supplies (ups) z welding advantages z easy to mount with 1 screw z high power density ds99023(03/03) g = gate e = emitter tab = collector high speed igbt short circuit soa capability v ces = 600 v i c25 = 48a v ce(sat) = 2.5 v t fi typ = 170 ns ixsp 24n60b to-220 (i xsp ) g c e c (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 9 13 s pulse test, t 300 s, duty cycle 2 % c ies 1450 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 130 pf c res 37 pf q g 41 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 18 nc q gc 18 nc t d(on) 50 ns t ri 50 ns t d(off) 150 250 ns t fi 170 300 ns e off 1.3 2.6 mj t d(on) 55 ns t ri 75 ns e on 1.2 mj t d(off) 190 ns t fi 280 ns e off 2.4 mj r thjc 0.83 k/w r thck 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v, v ce = 0.8 v ces , r g = 33 ? inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = 33 ? ixsp 24n60b pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 outline
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